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Erratum: 'Impact of surface treatment on metal-work-function dependence of barrier height of GaN-on-GaN Schottky barrier diode' [AIP Adv. 8, 115011 (2018)]

Authors :
Masamichi Akazawa
Kazuki Isobe
Source :
AIP Advances, Vol 11, Iss 2, Pp 029901-029901-1 (2021)
Publication Year :
2021
Publisher :
AIP Publishing LLC, 2021.

Details

Language :
English
ISSN :
21583226
Volume :
11
Issue :
2
Database :
OpenAIRE
Journal :
AIP Advances
Accession number :
edsair.doi.dedup.....555ffc5910cc56fceaf2a21ae0278bcd