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Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier

Authors :
Schreurs, D.
De Raedt, W.
Vandersmissen, R.
Neuhaus, B.
Beyer, A.
Nauwelaers, B.
Source :
Schreurs, D. ; De Raedt, W. ; Vandersmissen, R. ; Neuhaus, B. ; Beyer, A. ; Nauwelaers, B. (2001) Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Publication Year :
2001
Publisher :
Microwave engineering Europe, 2001.

Abstract

We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed by the maximally instantaneous voltages/currents and hence that comparisons should be conducted at equal instantaneous conditions.

Subjects

Subjects :
ING-INF/01 Elettronica

Details

Language :
Italian
Database :
OpenAIRE
Journal :
Schreurs, D. ; De Raedt, W. ; Vandersmissen, R. ; Neuhaus, B. ; Beyer, A. ; Nauwelaers, B. (2001) Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Accession number :
edsair.doi.dedup.....55809629a29e16218c92de6a55856663