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Signatures of extended defects in Cu(In,Ga)Se2 observed using capacitance spectroscopy techniques
- Source :
- Journal of Physics and Chemistry of Solids, Journal of Physics and Chemistry of Solids, Elsevier, 2019, 134, pp.58-63. ⟨10.1016/j.jpcs.2019.05.034⟩
- Publication Year :
- 2019
- Publisher :
- HAL CCSD, 2019.
-
Abstract
- This work concerns the interpretation of defect spectroscopy signals in CuInSe2-and Cu(In,Ga)Se2-based Schottky junctions and thin films, which are investigated using capacitance- and current-based techniques. Two common signals are distinguished. It is shown here that the activation energies and consequently the emission rates vary between the samples and are strongly correlated with the hole concentration in the material. Models that can account for these changes are discussed. Based on deep-level transient spectroscopy and conductivity measurements, we present arguments for the validity of the existing models and discuss the hypothesis that the observable signals may originate from extended defects in Cu(In,Ga)Se2.
- Subjects :
- Work (thermodynamics)
Materials science
Capacitance spectroscopy
Schottky diode
Observable
02 engineering and technology
General Chemistry
Conductivity
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Capacitance
Molecular physics
0104 chemical sciences
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
General Materials Science
Thin film
0210 nano-technology
Spectroscopy
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- Language :
- English
- ISSN :
- 00223697
- Database :
- OpenAIRE
- Journal :
- Journal of Physics and Chemistry of Solids, Journal of Physics and Chemistry of Solids, Elsevier, 2019, 134, pp.58-63. ⟨10.1016/j.jpcs.2019.05.034⟩
- Accession number :
- edsair.doi.dedup.....58bcebe1e9ddcb9e7f66619baddb6853