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Low temperature grown GaAs lossy dielectric heterostructure FET
- Source :
- Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, Ithaca, United States, Scopus-Elsevier
- Publication Year :
- 1995
- Publisher :
- HAL CCSD, 1995.
-
Abstract
- A lossy dielectric FET has been realized and evaluated for the first time by employing /spl sigma/-LT-GaAs. 3.5 W/mm RF power capability extracted from the DC output characteristics give evidence for a field redistribution which overcomes the power limitation of Schottky gate FET devices. 60 GHz f/sub max/ values have been obtained for 1 /spl mu/m devices. Gate-drain breakdown voltages above 30 V have been identified at 2 GHz in conjunction with a channel sheet charge of 5/spl middot/10/sup 12/ cm/sup -2/. Parasitics, specific to the lossy dielectric have been widely eliminated. However limitations specific to the /spl sigma/-LT-GaAs material need still to be overcome, which is discussed.
- Subjects :
- 010302 applied physics
Materials science
business.industry
020208 electrical & electronic engineering
RF power amplifier
Heterojunction
02 engineering and technology
Dielectric
01 natural sciences
Gallium arsenide
[SPI.TRON]Engineering Sciences [physics]/Electronics
chemistry.chemical_compound
[SPI]Engineering Sciences [physics]
chemistry
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Dielectric loss
Radio frequency
Parasitic extraction
business
ComputingMilieux_MISCELLANEOUS
Voltage
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, Ithaca, United States, Scopus-Elsevier
- Accession number :
- edsair.doi.dedup.....5a17873dcd5d8b63b9994a2d4c106682