Low temperature grown GaAs lossy dielectric heterostructure FET

Authors :: K.-M. Lipka
Bertrand Boudart
C.F. Weitzel
L.L. Pond
R. Splingart
G. Salmer
Erhard Kohn
R. Westphalen
Didier Theron
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, Ithaca, United States, Scopus-Elsevier
Publication Year :: 1995
Publisher :: HAL CCSD, 1995.
Abstract: A lossy dielectric FET has been realized and evaluated for the first time by employing /spl sigma/-LT-GaAs. 3.5 W/mm RF power capability extracted from the DC output characteristics give evidence for a field redistribution which overcomes the power limitation of Schottky gate FET devices. 60 GHz f/sub max/ values have been obtained for 1 /spl mu/m devices. Gate-drain breakdown voltages above 30 V have been identified at 2 GHz in conjunction with a channel sheet charge of 5/spl middot/10/sup 12/ cm/sup -2/. Parasitics, specific to the lossy dielectric have been widely eliminated. However limitations specific to the /spl sigma/-LT-GaAs material need still to be overcome, which is discussed.

Language :: English
Database :: OpenAIRE
Journal :: Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, Ithaca, United States, Scopus-Elsevier
Accession number :: edsair.doi.dedup.....5a17873dcd5d8b63b9994a2d4c106682

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