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Femtosecond Photon Echoes from Band-to-Band Transitions in GaAs

Authors :
J. E. Cunningham
C. H. Brito Cruz
C. V. Shank
Hugo L. Fragnito
Richard L. Fork
Jaymie Henry
P. C. Becker
Source :
Physical Review Letters. 61:1647-1649
Publication Year :
1988
Publisher :
American Physical Society (APS), 1988.

Abstract

We report the first observation of femtosecond photon echoes from the band-to-band transitions in a bulk semiconductor. The time decay of the echo, found to vary from 3.5 to 11 fs, has allowed us to determine the polarization dephasing rate in GaAs. This rate was found to depend on the carrier density in the experimental range covered, 1.5\ifmmode\times\else\texttimes\fi{}${10}^{17}$ to 7\ifmmode\times\else\texttimes\fi{}${10}^{18}$ ${\mathrm{cm}}^{\ensuremath{-}3}$, indicating the dominance of carrier-carrier scattering as the principal dephasing mechanism. The observed functional dependence of the dephasing rate on the carrier density has yielded previously unavailable information on Coulomb screening in a nonequilibrium carrier distribution.

Details

ISSN :
00319007
Volume :
61
Database :
OpenAIRE
Journal :
Physical Review Letters
Accession number :
edsair.doi.dedup.....5ad665364e193d43af3c8aad73997f69
Full Text :
https://doi.org/10.1103/physrevlett.61.1647