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Quantitative impedance characterization of sub-10 nm scale capacitors and tunnel junctions with an interferometric scanning microwave microscope
- Source :
- Nanotechnology. 25:405703
- Publication Year :
- 2014
- Publisher :
- IOP Publishing, 2014.
-
Abstract
- We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an 'on-chip' calibration kit facing thousands of nanodevices. Nanoscale capacitors and tunnel barriers were detected through variations in the amplitude and phase of the reflected microwave signal, respectively. This study promises quantitative impedance characterization of a wide range of emerging functional nanoscale devices.
- Subjects :
- Materials science
Microscope
Bioengineering
Nanotechnology
02 engineering and technology
01 natural sciences
Signal
law.invention
law
0103 physical sciences
Microscopy
General Materials Science
Electrical and Electronic Engineering
Nanoscopic scale
010302 applied physics
business.industry
Mechanical Engineering
General Chemistry
021001 nanoscience & nanotechnology
Characterization (materials science)
Interferometry
Capacitor
Mechanics of Materials
Optoelectronics
0210 nano-technology
business
Microwave
Subjects
Details
- ISSN :
- 13616528 and 09574484
- Volume :
- 25
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi.dedup.....5b49cdd5c44a1900f970c75138daf28c