XPS STUDY OF LASER-ANNEALED ION-IMPLANTED GAAS

Data on the effects of 140 keV Zn+ implanation of (100)GaAs and the consequent low-power pulsed laser annealing (LPPLA) on the composition of the surface layers are presented. The implantation does was 1014 cm −2 and the sample temperature was kept at 110 ± 10°C. THE LPPLA was carried out by 10–30 pulses of a Q-switched ruby laser (λ = 694.3 nm, τ = 25 ns and P0 = 4–6 MW cm−2) equipped with a spatial homogenizer. The crystal surface was studied by XPS analysis combined with depth profiling with the use of 1 keV Ar+. The results presented include the depth redistribution of oxygen and the As/Ga ratio as well as the oxide thickness for (a) virgin, (b) as-implanted and (c) implanted and then annealed samples.