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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature
- Source :
- Proceedings of the IEEE 15th European Conference on Power Electronics and Applications, EPE, EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
- Publication Year :
- 2013
- Publisher :
- HAL CCSD, 2013.
-
Abstract
- 10 pages; International audience; Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.
- Subjects :
- JFET
Materials science
High temperature electronics
02 engineering and technology
Hardware_PERFORMANCEANDRELIABILITY
Blocking (statistics)
01 natural sciences
Silicon Carbide (SiC)
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Device modeling
Voltage range
Device characterisation
010302 applied physics
business.industry
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Electrical engineering
Wide-bandgap semiconductor
Atmospheric temperature range
021001 nanoscience & nanotechnology
Threshold voltage
ComputerSystemsOrganization_MISCELLANEOUS
Optoelectronics
0210 nano-technology
business
Voltage
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Proceedings of the IEEE 15th European Conference on Power Electronics and Applications, EPE, EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
- Accession number :
- edsair.doi.dedup.....5c79e767006bcf6100e7c86bdb239d0c
- Full Text :
- https://doi.org/10.1109/EPE.2013.6631963⟩