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Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Authors :
Régis Meuret
Fabien Dubois
Dominique Tournier
Dominique Bergogne
Cyril Buttay
Hervé Morel
Ampère (AMPERE)
École Centrale de Lyon (ECL)
Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon)
Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)
SAFRAN, Grp Hispano Suiza
SAFRAN Group
Source :
Proceedings of the IEEE 15th European Conference on Power Electronics and Applications, EPE, EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
Publication Year :
2013
Publisher :
HAL CCSD, 2013.

Abstract

10 pages; International audience; Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.

Details

Language :
English
Database :
OpenAIRE
Journal :
Proceedings of the IEEE 15th European Conference on Power Electronics and Applications, EPE, EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩
Accession number :
edsair.doi.dedup.....5c79e767006bcf6100e7c86bdb239d0c
Full Text :
https://doi.org/10.1109/EPE.2013.6631963⟩