Ab Initio Study of Structural, Electronic, Magnetic and Magnetoelastic Properties of the Magnetoelectric h-YMnO3 Semiconductor

MLA

E.K. Hlil, et al. “Ab Initio Study of Structural, Electronic, Magnetic and Magnetoelastic Properties of the Magnetoelectric h-YMnO3 Semiconductor.” Journal of Electronic Materials, vol. 50, Nov. 2020, pp. 657–63. EBSCOhost, https://doi.org/10.1007/s11664-020-08592-y.

APA

E.K. Hlil, Rachid Makhloufi, B. Lagoun, S. Khenchoul, A. Chadli, I. Chadli, & Linda Aissani. (2020). Ab Initio Study of Structural, Electronic, Magnetic and Magnetoelastic Properties of the Magnetoelectric h-YMnO3 Semiconductor. Journal of Electronic Materials, 50, 657–663. https://doi.org/10.1007/s11664-020-08592-y

Chicago

E.K. Hlil, Rachid Makhloufi, B. Lagoun, S. Khenchoul, A. Chadli, I. Chadli, and Linda Aissani. 2020. “Ab Initio Study of Structural, Electronic, Magnetic and Magnetoelastic Properties of the Magnetoelectric h-YMnO3 Semiconductor.” Journal of Electronic Materials 50 (November): 657–63. doi:10.1007/s11664-020-08592-y.