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Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors
- Source :
- I.E.E.E. transactions on electron devices (2016). doi:10.1109/TED.2016.2518305, info:cnr-pdr/source/autori:Giusi, G.; Giordano, O.; Scandurra, G.; Calvi, S.; Fortunato, G.; Rapisarda, M.; Mariucci, L.; Ciofi, C./titolo:Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors/doi:10.1109%2FTED.2016.2518305/rivista:I.E.E.E. transactions on electron devices/anno:2016/pagina_da:/pagina_a:/intervallo_pagine:/volume
- Publication Year :
- 2016
-
Abstract
- Low-frequency noise (LFN) has been used in order to gain insight into the physical properties of the materials involved in organic thin-film transistors (OTFTs) fabrication, often with contradictory results. Besides the physical origin of noise, contact effects on noise have been a source of concern and discussion. In this paper, we report on accurate LFN measurements in p-type staggered top-gate OTFTs over four decades of channel current, from the subthreshold to the strong accumulation region. The measured spectra follow a clear 1/ $f$ behavior attributed to the trapping/detrapping of channel charge carriers into interface and oxide defects, while the influence of noise sources at contacts is found to be negligible. However, contacts affect the measured noise by a nonnegligible differential resistance. Noise data are interpreted in the context of a multitrap correlated mobility fluctuations (CMFs) model, showing that noise is dominated by acceptor-like traps. Despite the low mobility ( $\mu _{{\mathrm{eff}}}\sim $ 2 cm2/V/s), the large scattering parameter ( $\alpha \sim 10 ^{7}$ Vs/C) produces an increase of the noise at the higher currents due to CMFs. The product $\alpha \mu _{{\mathrm{eff}}} \approx 2\cdot 10^{7}$ cm2/C, which measures the strength of CMFs, is similar to what was reported for a-Si:H and much higher with respect to crystalline silicon MOSFETs revealing a strong correlation between CMFs and the state of disorder of the active layer.
- Subjects :
- Materials science
Low-frequency noise (LFN)
Context (language use)
02 engineering and technology
01 natural sciences
organic thin-film transistor (OTFT)
LFN measurements (LFNMs)
0103 physical sciences
Electrical and Electronic Engineering
OTFT contacts
010302 applied physics
Condensed matter physics
Noise measurement
Scattering
business.industry
Electronic, Optical and Magnetic Materials
Order (ring theory)
021001 nanoscience & nanotechnology
Active layer
Thin-film transistor
Optoelectronics
Charge carrier
0210 nano-technology
business
Noise (radio)
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- I.E.E.E. transactions on electron devices (2016). doi:10.1109/TED.2016.2518305, info:cnr-pdr/source/autori:Giusi, G.; Giordano, O.; Scandurra, G.; Calvi, S.; Fortunato, G.; Rapisarda, M.; Mariucci, L.; Ciofi, C./titolo:Correlated Mobility Fluctuations and Contact Effects in p-Type Organic Thin-Film Transistors/doi:10.1109%2FTED.2016.2518305/rivista:I.E.E.E. transactions on electron devices/anno:2016/pagina_da:/pagina_a:/intervallo_pagine:/volume
- Accession number :
- edsair.doi.dedup.....5f4ad6e36d1d53e41703b9f65e007670