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Reversible shift of the transition temperature of manganites in planar field-effect devices patterned by atomic force microscope

Authors :
D. Marré
I. Pallecchi
Antonio Sergio Siri
Luca Pellegrino
Emilio Bellingeri
Source :
Applied physics letters (Online) 83 (2003): 4435–4437. doi:10.1063/1.1629399, info:cnr-pdr/source/autori:I.Pallecchi, L.Pellegrino, E.Bellingeri, A.S.Siri, D.Marré/titolo:Reversible shift of the transition temperature of manganites in planar field effect devices patterned by atomic force microscope/doi:10.1063%2F1.1629399/rivista:Applied physics letters (Online)/anno:2003/pagina_da:4435/pagina_a:4437/intervallo_pagine:4435–4437/volume:83
Publication Year :
2003
Publisher :
AIP Publishing, 2003.

Abstract

A planar side-gate device for field effect with a La0.67Ba0.33MnO3 channel on a SrTiO3 substrate is fabricated by means of the voltage-biased tip of an atomic force microscope. The peculiar geometry and the high dielectric permittivity of the substrate enhance the channel resistance modulation up to 20% at low temperature by a gate voltage of ±40 V. Moreover, a reversible shift by 1.3 K of the metal–insulator transition temperature (TMI) by field effect is observed. The signs of the changes of resistance and TMI both depend on the sign of the gate voltage, as expected for pure field effect; in particular, the TMI is raised (lowered) by accumulating (depleting) holes in the channel.

Details

ISSN :
10773118 and 00036951
Volume :
83
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....60fd75c62066c38faeee2b27ecb8c07d
Full Text :
https://doi.org/10.1063/1.1629399