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Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells

Authors :
Boning Ding
David J. Wallis
Martin Frentrup
Rachel A. Oliver
Menno J. Kappers
Gunnar Kusch
Simon M. Fairclough
Peter Mitchell
Stephen Church
David J. Binks
Church, SA [0000-0002-0413-7050]
Ding, B [0000-0003-2868-3416]
Mitchell, PW [0000-0002-7911-7062]
Kusch, G [0000-0003-2743-1022]
Fairclough, SM [0000-0003-3781-8212]
Oliver, RA [0000-0003-0029-3993]
Binks, DJ [0000-0002-9102-0941]
Apollo - University of Cambridge Repository
Source :
Church, S, Ding, B, Mitchell, P, Kappers, M J, Frentrup, M, Kusch, G, Fairclough, S, Wallis, D, Oliver, R A & Binks, D 2020, ' Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells ', Applied Physics Letters, vol. 117, 032103 . https://doi.org/10.1063/5.0012131
Publication Year :
2020
Publisher :
AIP Publishing, 2020.

Abstract

Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.

Details

ISSN :
10773118 and 00036951
Volume :
117
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....648d6e1fe302bc8ce78ade28a2ebfd00
Full Text :
https://doi.org/10.1063/5.0012131