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Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
- Source :
- Church, S, Ding, B, Mitchell, P, Kappers, M J, Frentrup, M, Kusch, G, Fairclough, S, Wallis, D, Oliver, R A & Binks, D 2020, ' Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells ', Applied Physics Letters, vol. 117, 032103 . https://doi.org/10.1063/5.0012131
- Publication Year :
- 2020
- Publisher :
- AIP Publishing, 2020.
-
Abstract
- Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the recombination in these systems. In this work, scanning transmission electron microscopy and energy-dispersive x-ray measurements demonstrate that one-dimensional nanostructures form due to indium segregation adjacent to stacking faults. In photoluminescence experiments, these structures emit visible light, which is optically polarized up to 86% at 10 K and up to 75% at room temperature. The emission redshifts and broadens as the well width increases from 2 nm to 8 nm. Photoluminescence excitation measurements indicate that carriers are captured by these structures from the rest of the quantum wells and recombine to emit light polarized along the length of these nanostructures.
- Subjects :
- Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
ResearchInstitutes_Networks_Beacons/photon_science_institute
Stacking
Gallium nitride
polarisation
02 engineering and technology
Photon Science Institute
01 natural sciences
5108 Quantum Physics
Condensed Matter::Materials Science
chemistry.chemical_compound
0103 physical sciences
Scanning transmission electron microscopy
Photoluminescence excitation
4018 Nanotechnology
Quantum well
40 Engineering
010302 applied physics
business.industry
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
InGaN/GaN
Quantum wells
Semiconductor
chemistry
Optoelectronics
0210 nano-technology
business
51 Physical Sciences
Stacking fault
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 117
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....648d6e1fe302bc8ce78ade28a2ebfd00
- Full Text :
- https://doi.org/10.1063/5.0012131