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Selective area growth of GaAs on silicon
- Source :
- Scopus-Elsevier
-
Abstract
- The epitaxial growth of GaAs on patterned Si(001) substrates by MOCVD is presented. Effect of growth temperature and V/III ratio on coalescence is investigated. Meanwhile, changing total pressure can reduce the polycrystals generated on mask.
- Subjects :
- Coalescence (physics)
Materials science
Silicon
business.industry
Scanning electron microscope
chemistry.chemical_element
Chemical vapor deposition
Epitaxy
Gallium arsenide
chemistry.chemical_compound
Semiconductor
chemistry
Electronic engineering
Optoelectronics
Metalorganic vapour phase epitaxy
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Scopus-Elsevier
- Accession number :
- edsair.doi.dedup.....656574e6187d9dfaa1fba2531df9e7c3