Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

MLA

P. Geranzani, et al. “Infrared Characterization of Oxygen Precipitates in Silicon Wafers with Different Concentrations of Interstitial Oxygen.” Materials Science and Engineering: B, vol. 73, Apr. 2000, pp. 145–48. EBSCOhost, https://doi.org/10.1016/s0921-5107(99)00459-6.

APA

P. Geranzani, Adele Sassella, M. Porrini, Alessandro Borghesi, & Branko Pivac. (2000). Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen. Materials Science and Engineering: B, 73, 145–148. https://doi.org/10.1016/s0921-5107(99)00459-6

Chicago

P. Geranzani, Adele Sassella, M. Porrini, Alessandro Borghesi, and Branko Pivac. 2000. “Infrared Characterization of Oxygen Precipitates in Silicon Wafers with Different Concentrations of Interstitial Oxygen.” Materials Science and Engineering: B 73 (April): 145–48. doi:10.1016/s0921-5107(99)00459-6.