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Low thermal budget fabrication of III-V quantum nanostructures on Si substrates

Authors :
Daniel Chrastina
Stefano Sanguinetti
Giovanni Isella
Claudio Somaschini
Nobuyuki Koguchi
Sergio Bietti
Alexey Fedorov
Bietti, S
Somaschini, C
Sanguinetti, S
Koguchi, N
Isella, G
Chrastina, D
Fedorov, A
Publication Year :
2010

Abstract

We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....67694fcd62feabece5641a88f5caf535