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Low thermal budget fabrication of III-V quantum nanostructures on Si substrates
- Publication Year :
- 2010
-
Abstract
- We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.
- Subjects :
- History
Fabrication
Materials science
Silicon
business.industry
chemistry.chemical_element
Germanium
Substrate (electronics)
Atmospheric temperature range
Epitaxy
Computer Science Applications
Education
Active layer
quantum nanostructure
dropet epitaxy, III-V semiconductor
CMOS
chemistry
Optoelectronics
business
Low thermal budget fabrication of III-V quantum nanostructures on Si substrates
FIS/03 - FISICA DELLA MATERIA
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....67694fcd62feabece5641a88f5caf535