Cite
Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices
MLA
Bernat Mundet, et al. Hot Electron Engineering for Boosting Electroluminescence Efficiencies of Silicon-Rich Nitride Light Emitting Devices. Jan. 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....67704073fd350981b5e3be9c72fbdacf&authtype=sso&custid=ns315887.
APA
Bernat Mundet, J.A. Rodríguez, Josep Montserrat, B. Garrido, Yonder Berencén, & C. Dominguez. (2017). Hot electron engineering for boosting electroluminescence efficiencies of silicon-rich nitride light emitting devices.
Chicago
Bernat Mundet, J.A. Rodríguez, Josep Montserrat, B. Garrido, Yonder Berencén, and C. Dominguez. 2017. “Hot Electron Engineering for Boosting Electroluminescence Efficiencies of Silicon-Rich Nitride Light Emitting Devices,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....67704073fd350981b5e3be9c72fbdacf&authtype=sso&custid=ns315887.