Self-sustained Oscillation of Superjunction MOSFET Intrinsic Diode during Reverse Recovery Transient

In this paper, the self-sustained oscillation occurs on the reverse recovery transient of the superjunction MOSFET intrinsic diode is studied. Based on the double-pulse test, the characteristics of the self-sustained oscillation is identified. Utilizing the Senturus TCAD simulation, the superjunction MOSFET intrinsic diode's reverse recovery oscillation behavior is reproduced. By analyzing the oscillation waveforms, the positive feedback mechanism which excites the oscillation is revealed at the end of the paper.