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Optimizing the Number of Steps and the Noise in Staircase APDs with Ternary III - V Semiconductor Alloys

Authors :
Giorgio Biasiol
T. Steinhartova
R.H. Menk
Francesco Driussi
David Esseni
Fulvia Arfelli
A. Pilotto
M. Antonelli
Pierpaolo Palestri
Luca Selmi
C. Nichetti
G. Cautero
Pilotto, A.
Esseni, D.
Menk, R. H.
Steinhartova, T.
Nichetti, C.
Palestri, P.
Selmi, L.
Antonelli, M.
Arfelli, F.
Biasiol, G.
Cautero, G.
Driussi, F.
Source :
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble (FR), 2019, info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
Publication Year :
2019
Publisher :
Institute of Electrical and Electronics Engineers Inc., 2019.

Abstract

We report simulation results for gain and noise in avalanche photodiodes fabricated using heterojunctions of III-V compound semiconductors. We employ a recently developed nonlocal model for impact ionization. The model has been calibrated and validated on devices fabricated and measured in our labs and data from the literature. The model is then used to explore the design trade-offs related to the number of conduction band steps in staircase APDs for X-ray detection based on the GaAs/AlGaAs material system.

Details

Language :
English
Database :
OpenAIRE
Journal :
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble (FR), 2019, info:cnr-pdr/source/autori:Pilotto A.; Esseni D.; Menk R.H.; Steinhartova T.; Nichetti C.; Palestri P.; Selmi L.; Antonelli M.; Arfelli F.; Biasiol G.; Cautero G.; Driussi F./congresso_nome:2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)/congresso_luogo:Grenoble (FR)/congresso_data:2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine
Accession number :
edsair.doi.dedup.....69efd47e579404bf329206525b37471d