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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance
- Source :
- Scientific Reports, Scientific Reports, Nature Publishing Group, 2016, 6, pp.25757
- Publication Year :
- 2016
- Publisher :
- Nature Publishing Group, 2016.
-
Abstract
- Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the “OFF” state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.
- Subjects :
- Materials science
chemistry.chemical_element
02 engineering and technology
Settore ING-INF/01 - Elettronica
01 natural sciences
Article
Protein filament
[SPI]Engineering Sciences [physics]
Reliability (semiconductor)
0103 physical sciences
[ SPI ] Engineering Sciences [physics]
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Electrical conductor
ComputingMilieux_MISCELLANEOUS
010302 applied physics
Multidisciplinary
business.industry
Conductive atomic force microscopy
021001 nanoscience & nanotechnology
Resistive random-access memory
chemistry
Electrode
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic
0210 nano-technology
Tin
business
Current density
Subjects
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- OpenAIRE
- Journal :
- Scientific Reports
- Accession number :
- edsair.doi.dedup.....69f15395f59b3274a25c1a7545ddc700
- Full Text :
- https://doi.org/10.1038/srep25757