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Epitaxy of direct bandgap group IV heterostructure lasers
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers Inc., 2017.
-
Abstract
- We demonstrate epitaxial growth of direct bandgap group IV GeSn/SiGeSn double heterostructures and multi quantum wells. While both designs offer high structural quality and strong light emission, multi quantum wells benefit from a smaller number of defects at the active region.
- Subjects :
- Materials science
business.industry
Condensed Matter::Other
Heterojunction
02 engineering and technology
Epitaxy
Laser
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Atomic and Molecular Physics, and Optics
law.invention
Condensed Matter::Materials Science
020210 optoelectronics & photonics
Computer Networks and Communication
law
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Direct and indirect band gaps
Light emission
Stimulated emission
business
Instrumentation
Quantum well
Photonic crystal
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....6ad3ac6237ff8ce0a8e5939f55c4c4fc