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Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements
- Source :
- IEEE Transactions on Electron Devices, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩, IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- International audience; Abstract:This paper details an extraction procedure to fully model the transient self-heating of transistors from a GaN HEMT technology. Frequency-resolved gate resistance thermometry (f-GRT) is used to extract the thermal impedance of HEMTs with various gate widths. A fully scalable analytical model is developed from the experimental results. In the second stage, transient thermoreflectance imaging (TTI) is used to bring deeper insights into the HEMTs' temperature distribution by individually extracting the transient self-heating of each finger. TTI results are further used to successfully validate the f-GRT results and the modeling of the thermal impedance. Overall, f-GRT is demonstrated to be a fast and robust method for characterizing the transient thermal characteristics of a GaN HEMT. For the first time to the authors' knowledge, a scalable model of the thermal impedance is extracted fully from experimental results.
- Subjects :
- Materials science
Thermal resistance
Gallium nitride
High-electron-mobility transistor
01 natural sciences
Temperature measurement
law.invention
[SPI]Engineering Sciences [physics]
chemistry.chemical_compound
gate resistance thermometry (GRT)
law
0103 physical sciences
Thermal
Electrical and Electronic Engineering
ComputingMilieux_MISCELLANEOUS
010302 applied physics
high-electron-mobilitytransistors (HEMTs)
business.industry
Transistor
modeling
Electronic, Optical and Magnetic Materials
chemistry
Gallium nitride (GaN)
Logic gate
Optoelectronics
thermoreflectance
Transient (oscillation)
business
transient temperature measurement
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....6adbb5617df6cc2b0d72bbf8d827b410