Enhancing Si3N4 Waveguide Nonlinearity with Heterogeneous Integration of Few-Layer WS2

openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/H2020/965124/EU//FEMTOCHIP | openaire: EC/H2020/834742/EU//ATOP The heterogeneous integration of low-dimensional materials with photonic waveguides has spurred wide research interest. Here, we report on the experimental investigation and the numerical modeling of enhanced nonlinear pulse broadening in silicon nitride waveguides with the heterogeneous integration of few-layer WS2. After transferring a few-layer WS2 flake of similar to 14.8 mu m length, the pulse spectral broadening in a dispersion-engineered silicon nitride waveguide has been enhanced by similar to 48.8% in bandwidth. Through numerical modeling, an effective nonlinear coefficient higher than 600 m(-1) W-1 has been retrieved for the heterogeneous waveguide indicating an enhancement factor of larger than 300 with respect to the pristine waveguide at a wavelength of 800 nm. With further advances in two-dimensional material fabrication and integration techniques, on-chip heterostructures will offer another degree of freedom for waveguide engineering, enabling high-performance nonlinear optical devices, such asfrequency combs and quantum light sources.