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Surface chemistry of InP ridge structures etched in Cl 2 -based plasma analyzed with angular XPS

Authors :
Edmond Cambril
Ahmed Rhallabi
Christophe Cardinaud
Stéphane Guilet
Arnaud Pageau
R. Chanson
Sophie Bouchoule
Laboratoire de photonique et nanostructures (LPN)
Centre National de la Recherche Scientifique (CNRS)
Institut des Matériaux Jean Rouxel (IMN)
Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST)
Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN)
Université de Nantes (UN)-Université de Nantes (UN)
Laboratoire de Microstructures et de Microélectronique (L2M)
Laboratoire de photonique et de nanostructures (LPN)
Source :
Journal of Vacuum Science and Technology A, Journal of Vacuum Science and Technology A, American Vacuum Society, 2015, 33 (5), ⟨10.1116/1.4927541⟩
Publication Year :
2015
Publisher :
HAL CCSD, 2015.

Abstract

Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl2/Ar and Cl2/H2 plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven. Results also evidence that adding H2 to Cl2 does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.

Details

Language :
English
ISSN :
07342101
Database :
OpenAIRE
Journal :
Journal of Vacuum Science and Technology A, Journal of Vacuum Science and Technology A, American Vacuum Society, 2015, 33 (5), ⟨10.1116/1.4927541⟩
Accession number :
edsair.doi.dedup.....6c0222cbe718a24ab94390637c9e86d7
Full Text :
https://doi.org/10.1116/1.4927541⟩