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Analysis of Kink Effect and Short Channel Effects in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs
- Source :
- Journal of display technology 9 (2013): 764–769. doi:10.1109/JDT.2013.2280973, info:cnr-pdr/source/autori:Valletta A, Mariucci L, Pecora A, Maiolo L, Brotherton SD, Fortunato G/titolo:Analysis of Kink Effect and Short Channel Effects in Fully Self-Aligned Gate Overlapped Lightly Doped Drain Polysilicon TFTs/doi:10.1109%2FJDT.2013.2280973/rivista:Journal of display technology/anno:2013/pagina_da:764/pagina_a:769/intervallo_pagine:764–769/volume:9
- Publication Year :
- 2013
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2013.
-
Abstract
- Electrical characteristics of fully self-aligned gate overlapped lightly doped drain (FSA-GOLDD) polysilicon TFTs, fabricated with a spacer technology providing submicron (0.35 mu m) LDD regions, have been analyzed by using two-dimensional numerical simulations. The numerical analysis was used to explain the observed reduced kink effect and short channel effects presented by FSA GOLDD devices, compared to SA devices. The reduction of the kink effect has been attributed to the reduced impact ionization rate, and related to reduced electric fields at the channel/LDD junction. In addition, the role of the LDD dose on the kink effect has been also investigated, clarifying the observed current inflection occurring in the kink effect regime and the LDD dose dependence of the breakdown. Reduced short channel effects were attributed to reduced floating body effects, since drain induced barrier lowering was apparently not affected by the SA GOLDD structure, when compared to SA devices.
- Subjects :
- Materials science
business.industry
Polysilicon depletion effect
Doping
Electrical engineering
Drain-induced barrier lowering
Plasma
Self-aligned gate
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Impact ionization
Thin-film transistor
Electric field
Optoelectronics
lipids (amino acids, peptides, and proteins)
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 15589323 and 1551319X
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- Journal of Display Technology
- Accession number :
- edsair.doi.dedup.....6d9264e08913d329b3b317f2fc0f15b6