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Hybrid plasma modes in transistors: linear and non-linear responses

Authors :
Hugues Marinchio
Luca Varani
V. V. Korotyeyev
C. Palermo
Institut d’Electronique et des Systèmes (IES)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Térahertz, hyperfréquence et optique (TéHO)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Institute of Semiconductor Physics NAS of Ukraine
National Academy of Sciences of Ukraine (NASU)
Source :
19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, 2015, Salamanca, Spain. pp.012035, ⟨10.1088/1742-6596/647/1/012035⟩
Publication Year :
2015
Publisher :
IOP Publishing, 2015.

Abstract

We present an analytical model based on hydrodynamic equations and a pseudo-two-dimensional Poisson equation to study the response of a nanometric field-effect transistor channel in the THz domain. This model allows to study different kinds of external excitations of plasma modes and different geometries. We calculate the two first-order responses of the drain voltage or current, which are of peculiar interest in the perspective of THz wave generation and detection and THz electronics. Even at room temperature, each responses present resonances at the eigenfrequencies of the hybrid plasma modes sustained in the channel.

Details

ISSN :
17426596 and 17426588
Volume :
647
Database :
OpenAIRE
Journal :
Journal of Physics: Conference Series
Accession number :
edsair.doi.dedup.....6daf84be0bb287e31fc5a9d95a757bcb