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Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices

Authors :
S. K. Paprotskiy
A. A. Usikova
I. V. Altukhov
Miron S. Kagan
Roland Teissier
N. D. Il’inskaya
Alexei N. Baranov
Institut d’Electronique et des Systèmes (IES)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Source :
Fizika i tekhnika poluprovodnicov / Semiconductors, Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2013, 47 (11), pp.1478-1480. ⟨10.1134/S1063782613110080⟩
Publication Year :
2013
Publisher :
HAL CCSD, 2013.

Abstract

Vertical transport in short-period InAs/AlSb superlattices with type-II heterojunctions is studied at room temperature. It is found that negative differential conductivity appears in the miniband-conduction mode upon the overlapping of quantum-confined states in a periodic system of quantum wells. In the nonresonant-tunneling mode, equidistant peaks appear on the current-voltage characteristic of these superlattices. These peaks are attributed to the influence of the optical cavity on optical electron transitions in quantum wells (Purcell effect).

Details

Language :
English
ISSN :
10637826 and 10906479
Database :
OpenAIRE
Journal :
Fizika i tekhnika poluprovodnicov / Semiconductors, Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2013, 47 (11), pp.1478-1480. ⟨10.1134/S1063782613110080⟩
Accession number :
edsair.doi.dedup.....6dd436fc02787c8c9667fe192ef3002c