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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
- Source :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.024504-1-4. ⟨10.1063/1.3291101⟩, Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩
- Publication Year :
- 2010
- Publisher :
- HAL CCSD, 2010.
-
Abstract
- We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov–Shur plasma wave instability in the gated two-dimensional electron gas.
- Subjects :
- 010302 applied physics
Electron mobility
Materials science
Waves in plasmas
business.industry
Terahertz radiation
Transistor
Wide-bandgap semiconductor
Induced high electron mobility transistor
General Physics and Astronomy
02 engineering and technology
Plasma
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
[SPI.TRON]Engineering Sciences [physics]/Electronics
Computer Science::Hardware Architecture
Computer Science::Emerging Technologies
law
0103 physical sciences
Optoelectronics
0210 nano-technology
Fermi gas
business
Subjects
Details
- Language :
- English
- ISSN :
- 00218979 and 10897550
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics, Journal of Applied Physics, American Institute of Physics, 2010, 107, pp.024504-1-4. ⟨10.1063/1.3291101⟩, Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩
- Accession number :
- edsair.doi.dedup.....6e2c01bf296524c96c3cde7fa7f28dfc