Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

MLA

Jong-Ho Bae, et al. “Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.” Micromachines, vol. 12, Mar. 2021, p. 327. EBSCOhost, https://doi.org/10.3390/mi12030327.

APA

Jong-Ho Bae, Dae Hwan Kim, Dong Myong Kim, Changwook Kim, Je-Hyuk Kim, Yoon Kim, Jun Tae Jang, & Sung-Jin Choi. (2021). Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors. Micromachines, 12, 327. https://doi.org/10.3390/mi12030327

Chicago

Jong-Ho Bae, Dae Hwan Kim, Dong Myong Kim, Changwook Kim, Je-Hyuk Kim, Yoon Kim, Jun Tae Jang, and Sung-Jin Choi. 2021. “Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.” Micromachines 12 (March): 327. doi:10.3390/mi12030327.