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High-Performance All-Polymer Solar Cells Enabled by an n-Type Polymer Based on a Fluorinated Imide-Functionalized Arene

Authors :
Jianwei Yu
Han Young Woo
Yingfeng Wang
Xugang Guo
Shaohua Ling
Kun Yang
Ruizhi Wang
Yumin Tang
Chang Woo Koh
Yongqiang Shi
Huiliang Sun
Source :
Advanced materials (Deerfield Beach, Fla.). 31(15)
Publication Year :
2018

Abstract

A novel imide-functionalized arene, di(fluorothienyl)thienothiophene diimide (f-FBTI2), featuring a fused backbone functionalized with electron-withdrawing F atoms, is designed, and the synthetic challenges associated with highly electron-deficient fluorinated imide are overcome. The incorporation of f-FBTI2 into polymer affords a high-performance n-type semiconductor f-FBTI2-T, which shows a reduced bandgap and lower-lying lowest unoccupied molecular orbital (LUMO) energy level than the polymer analog without F or with F-functionalization on the donor moiety. These optoelectronic properties reflect the distinctive advantages of fluorination of electron-deficient acceptors, yielding "stronger acceptors," which are desirable for n-type polymers. When used as a polymer acceptor in all-polymer solar cells, an excellent power conversion efficiency of 8.1% is achieved without any solvent additive or thermal treatment, which is the highest value reported for all-polymer solar cells except well-studied naphthalene diimide and perylene diimide-based n-type polymers. In addition, the solar cells show an energy loss of 0.53 eV, the smallest value reported to date for all-polymer solar cells with efficiency > 8%. These results demonstrate that fluorination of imide-functionalized arenes offers an effective approach for developing new electron-deficient building blocks with improved optoelectronic properties, and the emergence of f-FBTI2 will change the scenario in terms of developing n-type polymers for high-performance all-polymer solar cells.

Details

ISSN :
15214095
Volume :
31
Issue :
15
Database :
OpenAIRE
Journal :
Advanced materials (Deerfield Beach, Fla.)
Accession number :
edsair.doi.dedup.....6eac98ca8adc2fae724333422d75bf26