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A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers
- Source :
- Solid-state electronics 46 (2002): 1351–1358. doi:10.1016/S0038-1101(02)00082-5, info:cnr-pdr/source/autori:Cuscunà M., Bonfiglietti A., Carluccio R., Mariucci L., Mecarini F., Pecora A., Stanizzi M., Valletta A., Fortunato G./titolo:A novel fabrication process for polysilicon Thin Film Transistors with source%2Fdrain contacts formed by deposition and lift-off of highly doped layers/doi:10.1016%2FS0038-1101(02)00082-5/rivista:Solid-state electronics/anno:2002/pagina_da:1351/pagina_a:1358/intervallo_pagine:1351–1358/volume:46
- Publication Year :
- 2002
- Publisher :
- Elsevier BV, 2002.
-
Abstract
- A novel fabrication process for low-temperature (
- Subjects :
- Materials science
Fabrication
business.industry
Polysilicon depletion effect
Doping
engineering.material
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Active layer
Polycrystalline silicon
Thin-film transistor
Materials Chemistry
Electronic engineering
engineering
Optoelectronics
Thin film transistors
Excimer laser annealing
Electrical and Electronic Engineering
business
Septic drain field
Voltage
Subjects
Details
- ISSN :
- 00381101
- Volume :
- 46
- Database :
- OpenAIRE
- Journal :
- Solid-State Electronics
- Accession number :
- edsair.doi.dedup.....7093ce88a7b501abd5a4ed1984256324