Cite
Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite
MLA
Jaeho Choi, et al. “Correction: Wafer-Scale Reliable Switching Memory Based on 2-Dimensional Layered Organic-Inorganic Halide Perovskite.” Nanoscale, vol. 9, no. 43, Oct. 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....719c5d24ceb7a7fcc19d7a353da1103d&authtype=sso&custid=ns315887.
APA
Jaeho Choi, Donghwa Lee, Ho Won Jang, Can Cuhadar, Ji Su Han, Nam-Gyu Park, Hui-Seon Kim, Jaegyeom Kim, June-Mo Yang, Seung-Joo Kim, & Ja-Young Seo. (2017). Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskite. Nanoscale, 9(43).
Chicago
Jaeho Choi, Donghwa Lee, Ho Won Jang, Can Cuhadar, Ji Su Han, Nam-Gyu Park, Hui-Seon Kim, et al. 2017. “Correction: Wafer-Scale Reliable Switching Memory Based on 2-Dimensional Layered Organic-Inorganic Halide Perovskite.” Nanoscale 9 (43). http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....719c5d24ceb7a7fcc19d7a353da1103d&authtype=sso&custid=ns315887.