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Charge Noise in Organic Electrochemical Transistors
- Source :
- Physical Review Applied. 7
- Publication Year :
- 2017
- Publisher :
- American Physical Society (APS), 2017.
-
Abstract
- Organic electrochemical transistors (OECTs) are increasingly studied as transducers in sensing applications. While much emphasis has been placed on analyzing and maximizing the OECT signal, noise has been mostly ignored, although it determines the resolution of the sensor. The major contribution to the noise in sensing devices is the 1/f noise, dominant at low frequency. In this work, we demonstrate that the 1/f noise in OECTs follows a charge-noise model, which reveals that the noise is due to charge fuctuations in proximity or within the bulk of the channel material. We present the noise scaling behavior with gate voltage, channel dimensions and polymer thickness. Our results suggest the use of large area channels in order to maximize the signal-to-noise-ratio (SNR) for biochemical and electrostatic sensing applications. Comparison with literature shows that the magnitude of the noise in OECTs is similar to that observed in graphene transistors, and only slightly higher compared to Carbon nanotubes and Silicon nanowire devices. In a model ion-sensing experiment with OECTs, we estimate crucial parameters such as the characteristic SNR and corresponding limit of detection.
- Subjects :
- Materials science
business.industry
Graphene
Transistor
General Physics and Astronomy
Charge (physics)
02 engineering and technology
Carbon nanotube
010402 general chemistry
021001 nanoscience & nanotechnology
Electrochemistry
01 natural sciences
Signal
Noise (electronics)
0104 chemical sciences
law.invention
law
Optoelectronics
0210 nano-technology
business
Communication channel
Subjects
Details
- ISSN :
- 23317019
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- Physical Review Applied
- Accession number :
- edsair.doi.dedup.....72593b062088d6b291e6dd227c1df96c