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Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications
- Source :
- IEEE Transactions on Electron Devices
- Publication Year :
- 2018
-
Abstract
- High-performance integrated tin monoxide bottom-gate staggered p-channel thin-film transistors (TFTs) are realized and reported. The active layer has been formed by thermal vacuum evaporation and rapid thermal annealing under a continuous nitrogen flow, resulting in field-effect mobilities up to 1.6 cm2/( $\textsf {V}\cdot \textsf {s}$ ) and contact resistances of around $148~\Omega \cdot \textsf {cm}$ . The integration of these TFTs in elementary building blocks for digital circuit applications such as inverters and ring-oscillators is demonstrated, resulting in stage delays down to 300 ns. Furthermore, a unipolar p-type-only 8-bit radio frequency identification code generator is realized, achieving 12.2 kb/s and comprising 294 tin monoxide TFTs.
- Subjects :
- 010302 applied physics
Digital electronics
Materials science
business.industry
Transistor
Contact resistance
chemistry.chemical_element
Monoxide
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Active layer
chemistry
law
Thin-film transistor
Logic gate
0103 physical sciences
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Tin
Subjects
Details
- ISSN :
- 00189383
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....72feed99c09098ac780b7b35d51b0908
- Full Text :
- https://doi.org/10.1109/ted.2017.2781618