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Characterization of Sb/sub 2/Te/sub 3/ ohmic contacts on P-type CdTe single crystals

Authors :
N. Romeo
A. Bosio
E. Gombia
F. Bissoli
Andrea Zappettini
Source :
Proceedings of the IEEE 7 (2004): 4518–4519., info:cnr-pdr/source/autori:Zappettini A., Bissoli F., Gombia E., Bosio A., Romeo N./titolo:Characterization of Sb2Te3 ohmic contacts on p-type CdTe single crystals/doi:/rivista:Proceedings of the IEEE/anno:2004/pagina_da:4518/pagina_a:4519/intervallo_pagine:4518–4519/volume:7, IEEE transactions on nuclear science 52 (2005): 1961–1963. doi:10.1109/TNS.2005.856819, info:cnr-pdr/source/autori:Zappettini A. a; Bissoli F. a; Gombia E. a; Bosio A. b; Romeo N. b/titolo:Characterization of Sb2Te3 ohmic contacts on p-type CdTe single crystals/doi:10.1109%2FTNS.2005.856819/rivista:IEEE transactions on nuclear science/anno:2005/pagina_da:1961/pagina_a:1963/intervallo_pagine:1961–1963/volume:52, Scopus-Elsevier
Publication Year :
2005
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2005.

Abstract

The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb/sub 2/Te/sub 3/ contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time.

Details

ISSN :
00189499
Volume :
52
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi.dedup.....73a99c9d0ce8589df070fd3ad0f8cf86
Full Text :
https://doi.org/10.1109/tns.2005.856819