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Field Controlled Si Hall Element with Extended Operation Temperature Range from Liquid Helium Temperature up to 650K
- Source :
- Procedia Engineering. 120:1197-1200
- Publication Year :
- 2015
- Publisher :
- Elsevier BV, 2015.
-
Abstract
- The construction of Si Hall element formed in thin Si layer of SOI structure is considered. Hall element is a part of SOI FET accumulation mode transistor with built-in channel and MISIM field control systems. Such Hall element characterized by wide range of operation temperature from liquid Helium temperature up to 650K.
- Subjects :
- Range (particle radiation)
Materials science
Field (physics)
Condensed matter physics
Liquid helium
Transistor
Thermal Hall effect
Silicon on insulator
General Medicine
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
law
Hall effect sensor
Layer (electronics)
Engineering(all)
Subjects
Details
- ISSN :
- 18777058
- Volume :
- 120
- Database :
- OpenAIRE
- Journal :
- Procedia Engineering
- Accession number :
- edsair.doi.dedup.....745da5853c2256b63361ac11d188703b
- Full Text :
- https://doi.org/10.1016/j.proeng.2015.08.786