Field Controlled Si Hall Element with Extended Operation Temperature Range from Liquid Helium Temperature up to 650K

Authors :: A. A. Malykh
V.N. Mordkovich
M. I. Pavlyuk
A.V. Leonov
Source :: Procedia Engineering. 120:1197-1200
Publication Year :: 2015
Publisher :: Elsevier BV, 2015.
Abstract: The construction of Si Hall element formed in thin Si layer of SOI structure is considered. Hall element is a part of SOI FET accumulation mode transistor with built-in channel and MISIM field control systems. Such Hall element characterized by wide range of operation temperature from liquid Helium temperature up to 650K.

Subjects :: Range (particle radiation)
Materials science
Field (physics)
Condensed matter physics
Liquid helium
Transistor
Thermal Hall effect
Silicon on insulator
General Medicine
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
law
Hall effect sensor
Layer (electronics)
Engineering(all)

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