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V-Band GaAs Metamorphic Low-Noise Amplifier Design Technique for Sharp Gain Roll-Off at Lower Frequencies
- Source :
- IEEE Microwave and Wireless Components Letters. 30:601-604
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- In this letter, we present the design of a V- band low-noise amplifier for intersatellite crosslink receivers. The test vehicle, realized on industrial metamorphic gallium arsenide technology, operates from 57 to 66 GHz exhibiting 23-dB gain and an average 1.8-dB noise figure. Particular attention was devoted to the analysis and synthesis of an alternative bias injection topology to obtain a sharp gain roll-off at lower frequencies, thus avoiding the insertion, at system level, of an image-reject filter.
- Subjects :
- Materials science
Noise measurement
Roll-off
business.industry
Amplifier
Settore ING-INF/01
indium gallium arsenide
020206 networking & telecommunications
Topology (electrical circuits)
02 engineering and technology
millimeter-wave integrated circuits
Condensed Matter Physics
Noise figure
Low-noise amplifier
Gallium arsenide
chemistry.chemical_compound
chemistry
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Electrical and Electronic Engineering
low-noise amplifiers
business
V band
Subjects
Details
- ISSN :
- 15581764 and 15311309
- Volume :
- 30
- Database :
- OpenAIRE
- Journal :
- IEEE Microwave and Wireless Components Letters
- Accession number :
- edsair.doi.dedup.....768d52e330248efb62666e32ff650124
- Full Text :
- https://doi.org/10.1109/lmwc.2020.2986927