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High infrared light yield of Erbium-doped fluoride crystals
- Source :
- Journal of luminescence 219 (2020): 116883. doi:10.1016/j.jlumin.2019.116883, info:cnr-pdr/source/autori:Chiossi F.; Vasiukov S.; Borghesani A.F.; Braggio C.; Di Lieto A.; Tonelli M.; Carugno G./titolo:High infrared light yield of Erbium-doped fluoride crystals/doi:10.1016%2Fj.jlumin.2019.116883/rivista:Journal of luminescence/anno:2020/pagina_da:116883/pagina_a:/intervallo_pagine:116883/volume:219
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- The emission spectrum of Erbium-doped fluoride crystals excited by soft X-rays in the (400–1700) nm wavelength range is investigated between 3.2 K and 300 K. The largest component of the crystals emission is observed in the infrared range, which corresponds to a light yield of several tens of photons/keV. Such a large value is caused by energy transfer processes between the Erbium ions which convert the excitation of a dopant ion at high energies into the emission of multiple infrared photons. The present results show that this mechanism could be exploited to realize scintillators of high light yield.
- Subjects :
- Materials science
Infrared
Astrophysics::High Energy Astrophysical Phenomena
Biophysics
Physics::Optics
chemistry.chemical_element
Astrophysics::Cosmology and Extragalactic Astrophysics
02 engineering and technology
Scintillator
Infrared light yield
010402 general chemistry
01 natural sciences
Biochemistry
Ion
Erbium
Emission spectrum
Astrophysics::Galaxy Astrophysics
Dopant
business.industry
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
0104 chemical sciences
chemistry
Excited state
Yield (chemistry)
Erbium Cross relaxation
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 00222313
- Volume :
- 219
- Database :
- OpenAIRE
- Journal :
- Journal of Luminescence
- Accession number :
- edsair.doi.dedup.....7808fc23b981f7b2cf535acd0feeb68b
- Full Text :
- https://doi.org/10.1016/j.jlumin.2019.116883