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Tunneling Plasmonics in Bilayer Graphene

Authors :
Eric G. Iwinski
Chun Ning Lau
Guangxin Ni
Yongjin Lee
Michael M. Fogler
Dimitri Basov
Mengkun Liu
Mark H. Thiemens
Wenzhong Bao
Zhe Fei
Ah H. Castro-Neto
Martin Wagner
Michael Goldflam
Siyuan Dai
L. M. Zhang
Fritz Keilmann
Aleksandr Rodin
Source :
Nano letters, vol 15, iss 8, Fei, Z; Iwinski, EG; Ni, GX; Zhang, LM; Bao, W; Rodin, AS; et al.(2015). Tunneling Plasmonics in Bilayer Graphene. Nano Letters, 15(8), 4973-4978. doi: 10.1021/acs.nanolett.5b00912. UC San Diego: Retrieved from: http://www.escholarship.org/uc/item/6929n49b
Publication Year :
2015
Publisher :
eScholarship, University of California, 2015.

Abstract

We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At sub-nanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nano-imaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene: yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers.<br />27 pages, 11 figures

Details

Database :
OpenAIRE
Journal :
Nano letters, vol 15, iss 8, Fei, Z; Iwinski, EG; Ni, GX; Zhang, LM; Bao, W; Rodin, AS; et al.(2015). Tunneling Plasmonics in Bilayer Graphene. Nano Letters, 15(8), 4973-4978. doi: 10.1021/acs.nanolett.5b00912. UC San Diego: Retrieved from: http://www.escholarship.org/uc/item/6929n49b
Accession number :
edsair.doi.dedup.....791ecc0c9c9fe4db51e7787d529798ba