Radiation-induced alloy rearrangement in InxGa1− xN

The effect of radiation damage on the defect and alloy structure in InxGa1− xN thin films grown on Si substrates was studied using positron annihilation spectroscopy. Prior to the measurements, the samples were subjected to double He+ implantation at 40 and 100 keV. The results show the presence of cation vacancy-like defects in high concentrations (>1018 cm−3) already in the as-grown samples. The evolution of the annihilation characteristics after the implantation suggests strong alloy disorder rearrangement under irradiation. © 2017 Author(s).
V.P. and I.M. acknowledge financial support from the Academy of Finland (Project Nos. 285809 and 293932). This work has been partially supported by the Spanish MINECO under Contract No. MAT2015-71035-R.