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A wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
- Source :
- IET Microwaves, Antennas & Propagation, Vol 15, Iss 5, Pp 474-480 (2021)
- Publication Year :
- 2021
- Publisher :
- Wiley, 2021.
-
Abstract
- The authors present a novel wideband two‐dimensional voltage‐controlled attenuator (VCA). The proposed design employs both stacked‐FET configuration and distributed structure to achieve wideband performance, high power, and high dynamic range simultaneously. A systematic design methodology is also illustrated along with a fabricated prototype to verify the concept. The chip fabricated in a 0.15‐μm Gallium Arsenide (GaAs) process exhibiting a measured power at 1‐dB compression (P1dB) of 25.5 dBm with a corresponding dynamic range of 32 dB. The insertion loss ranges from 2 to 5 dB over the bandwidth from 2 to 40 GHz. Furthermore, the chip is not only very compact (0.84 mm2), but it also requires only a single positive supply voltage, which makes it more appealing to highly integrated wireless applications.
Details
- Language :
- English
- ISSN :
- 17518725 and 17518733
- Volume :
- 15
- Issue :
- 5
- Database :
- OpenAIRE
- Journal :
- IET Microwaves, Antennas & Propagation
- Accession number :
- edsair.doi.dedup.....79f62ca36f00c3f0919f42e305b1a9dd