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The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs
- Source :
- Journal of display technology 12 (2016): 252–256. doi:10.1109/JDT.2015.2466531, info:cnr-pdr/source/autori:Matteo Rapisarda, Sabrina Calvi, Antonio Valletta, Guglielmo Fortunato, and Luigi Mariucci/titolo:The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs/doi:10.1109%2FJDT.2015.2466531/rivista:Journal of display technology/anno:2016/pagina_da:252/pagina_a:256/intervallo_pagine:252–256/volume:12
- Publication Year :
- 2016
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2016.
-
Abstract
- We studied, by 2D numerical simulations, the effects of poor semiconductor morphology near the source and drain contacts of BGBC-OTFTs. The variations of the electrical characteristics and of the path of the injected carriers in the transistor channel have been analyzed considering different defective regions, parameters (mobility, density of states) and contact thicknesses. The results showed that 100 nm wide defective regions can induce high contact resistance, resulting in large variation in the electrical characteristics. However, the typical S-shape in the low-Vds output characteristics is clearly observed only considering a combination of highly defected regions and Schottky barrier at the contacts. Furthermore, the simulations showed that most of the current is injected and extracted, at the source and drain contact, within a few nanometers from the semiconductor- dielectric interface. This explains the small influence of the contact thickness on the simulated electrical characteristics, at least for a contact thickness down to 10 nm.
- Subjects :
- 010302 applied physics
Materials science
Computer simulation
business.industry
Schottky barrier
Transistor
Contact resistance
Electrical engineering
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Electronic, Optical and Magnetic Materials
law.invention
Semiconductor
law
Thin-film transistor
0103 physical sciences
WoS
Density of states
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Ohmic contact
Subjects
Details
- ISSN :
- 15589323 and 1551319X
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- Journal of Display Technology
- Accession number :
- edsair.doi.dedup.....7a6e6bd084b81e81c505c5289ce58543