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Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
- Source :
- Nanoscale Research Letters
- Publisher :
- Springer Nature
-
Abstract
- The effects of ex-situ annealing in a N2 ambient on the properties of GaAs/GaAsSbN/GaAs core-multi-shell nanowires on Si (111) substrate grown by self-catalyzed molecular beam epitaxy (MBE) are reported. As-grown nanowires exhibit band edge emission at ~0.99 eV with a shoulder peak at ~0.85 eV, identified to arise from band tail states. A large red shift of 7 cm(-1) and broadened Raman spectra of as-grown nanowires compared to that of non-nitride nanowires confirmed phonon localization at N-induced localized defects. On annealing nanowires to 750 °C, there was no change in the planar defects in the nanowire with respect to the as-grown nanowire; however, vanishing of the photoluminescence (PL) peak corresponding to band tail states along with enhanced band edge PL intensity, recovery of the Raman shift and increase in the Schottky barrier height from 0.1 to 0.4 eV clearly point to the efficient annihilation of point defects in these GaAsSbN nanowires. A significant reduction in the temperature-induced energy shift in the annealed nanowires is attributed to annihilation of band tail states and weak temperature dependence of N-related localized states. The observation of room temperature PL signal in the 1.3 μm region shows that the strategy of adding small amounts of N to GaAsSb is a promising route to realization of efficient nanoscale light emitters with reduced temperature sensitivity in the telecommunication wavelength region.
- Subjects :
- Materials science
Photoluminescence
Phonon
Annealing (metallurgy)
Schottky barrier
Nanowire
02 engineering and technology
01 natural sciences
symbols.namesake
Dilute nitrides
Materials Science(all)
Annealing effects
0103 physical sciences
General Materials Science
Point defects
010302 applied physics
Nano Express
business.industry
Nanowires
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallographic defect
symbols
Optoelectronics
0210 nano-technology
business
Raman spectroscopy
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 19317573
- Volume :
- 11
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Nanoscale Research Letters
- Accession number :
- edsair.doi.dedup.....7acf85aec1b7275aa07b4cf5021302e5
- Full Text :
- https://doi.org/10.1186/s11671-016-1265-4