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Making a field effect transistor on a single graphene nanoribbon by selective doping
- Source :
- Applied Physics Letters. 91:253122
- Publication Year :
- 2007
- Publisher :
- AIP Publishing, 2007.
-
Abstract
- Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.<br />4 pages, 3 figures. Accepted in APL
- Subjects :
- Condensed Matter - Materials Science
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Graphene
Doping
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
chemistry.chemical_element
Electronic structure
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
Condensed Matter::Materials Science
Semiconductor
chemistry
Zigzag
law
Condensed Matter::Superconductivity
Ribbon
Optoelectronics
Condensed Matter::Strongly Correlated Electrons
Field-effect transistor
Boron
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 91
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....7b4e39018cb9f54ee499f077f6c50155
- Full Text :
- https://doi.org/10.1063/1.2826547