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Making a field effect transistor on a single graphene nanoribbon by selective doping

Authors :
Bing Huang
Gang Zhou
Qimin Yan
Bing-Lin Gu
Wenhui Duan
Feng Liu
Jian Wu
Source :
Applied Physics Letters. 91:253122
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.<br />4 pages, 3 figures. Accepted in APL

Details

ISSN :
10773118 and 00036951
Volume :
91
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....7b4e39018cb9f54ee499f077f6c50155
Full Text :
https://doi.org/10.1063/1.2826547