Cite
Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
MLA
Hiroya Ikeda, et al. “Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen.” Japanese Journal of Applied Physics, vol. 42, Apr. 2003, pp. 1966–70. EBSCOhost, https://doi.org/10.1143/jjap.42.1966.
APA
Hiroya Ikeda, Mitsuo Sakashita, Ryoya Takahashi, Akira Sakai, Shigeaki Zaima, Osamu Nakatsuka, Yukio Yasuda, & Yasushi Kobayashi. (2003). Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen. Japanese Journal of Applied Physics, 42, 1966–1970. https://doi.org/10.1143/jjap.42.1966
Chicago
Hiroya Ikeda, Mitsuo Sakashita, Ryoya Takahashi, Akira Sakai, Shigeaki Zaima, Osamu Nakatsuka, Yukio Yasuda, and Yasushi Kobayashi. 2003. “Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen.” Japanese Journal of Applied Physics 42 (April): 1966–70. doi:10.1143/jjap.42.1966.