A novel phase shifter using two NMOS transistors and passive elements

In this paper, a new voltage-mode configuration for realizing a first-order phase shifter is suggested. The proposed phase shifter contains low number of components, i.e. two n-type metal-oxide semiconductor field effect transistors (NMOS transistors) both operating in saturation region, a grounded capacitor and three resistors. The presented circuit can be equipped with electronic tunability by using externally controllable electronic resistor. Computer simulation results, using SPICE program, are given to demonstrate the performance of the proposed phase shifter. © 2009 Springer Science+Business Media, LLC.