Enhancement of photoinduced transformations in amorphous chalcogenide film via surface plasmon resonances

Laser-matter coupling results specific structural changes in amorphous chalcogenide semiconductor layers which originate from electron-hole excitations, defect creation or modification and subsequent atomic motions. These changes can be influenced by plasmon fields. Plasmon enhanced photo-darkening and bleaching, optical recording in thin As x Se 1 − x films have been demonstrated in this paper, specifically in As 20 Se 80 and As 2 Se 3 compositions which revealed the best effects of stimulated expansion or optical darkening respectively due to the He–Ne laser (λ = 633 nm) illumination. Gold nanoparticles deposited on the silica glass substrate and covered by an amorphous chalcogenide film satisfy the conditions of efficient surface plasmon resonance in this spectral region. These experimental results support the importance of localized electric fields in photo-structural transformations of chalcogenide glasses as well as suggest better approaches for improving the performance of these optical recording media.