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15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition

Authors :
Nicola Armani
Massimo Mazzer
Roberto Mosca
Nicola Delmonte
M. Bronzoni
M. Calicchio
F. Pattini
Davide Calestani
S. Rampino
Edmondo Gilioli
E. Gombia
Lucia Nasi
Andrea Zappettini
F. Bissoli
Source :
Applied physics letters 101 (2012): 132107. doi:10.1063/1.4755772, info:cnr-pdr/source/autori:Rampino S., Armani N., Bissoli F., Bronzoni M., Calestani D., Calicchio M., Delmonte N., Gilioli E., Gombia E., Mosca R., Nasi L., Pattini F., Zappettini A., Mazzer M./titolo:15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition/doi:10.1063%2F1.4755772/rivista:Applied physics letters/anno:2012/pagina_da:132107/pagina_a:/intervallo_pagine:132107/volume:101
Publication Year :
2012
Publisher :
American Institute of Physics., New York [etc.], Stati Uniti d'America, 2012.

Abstract

An approach to low-cost production of Cu(In,Ga)Se2 (CIGS) solar cells based on pulsed electron deposition (PED) has achieved a crucial milestone. Lab-scale solar cells with efficiencies exceeding 15% were obtained by depositing CIGS from a stoichiometric quaternary target at 270 °C and without any post-growth treatment. An effective control of the p-doping level in CIGS was achieved by starting the PED deposition with a layer of NaF tailored to generate the optimum Na diffusion. These results show that PED is a promising technology for the development of a competitive low-cost production process for CIGS solar cells.

Details

Language :
English
Database :
OpenAIRE
Journal :
Applied physics letters 101 (2012): 132107. doi:10.1063/1.4755772, info:cnr-pdr/source/autori:Rampino S., Armani N., Bissoli F., Bronzoni M., Calestani D., Calicchio M., Delmonte N., Gilioli E., Gombia E., Mosca R., Nasi L., Pattini F., Zappettini A., Mazzer M./titolo:15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition/doi:10.1063%2F1.4755772/rivista:Applied physics letters/anno:2012/pagina_da:132107/pagina_a:/intervallo_pagine:132107/volume:101
Accession number :
edsair.doi.dedup.....7fb83805244fee84affc0b8f7d438f8b
Full Text :
https://doi.org/10.1063/1.4755772&prog=normal