CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate

Authors :: Yu Gao
Chuan Seng Tan
Chee Lip Gan
Kwang Hong Lee
Yue Wang
Eugene A. Fitzgerald
Wan Khai Loke
Soon Fatt Yoon
Kenneth Eng Kian Lee
School of Materials Science and Engineering
School of Electrical and Electronic Engineering
Source :: IEEE Transactions on Electron Devices. 68:6065-6068
Publication Year :: 2021
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2021.
Abstract: In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances (R-c)

Subjects :: Materials science
business.industry
Annealing (metallurgy)
Ohmic Contacts
Heterojunction bipolar transistor
Bipolar junction transistor
chemistry.chemical_element
Heterojunction
Epitaxy
Electronic, Optical and Magnetic Materials
chemistry
Electrical and electronic engineering [Engineering]
Optoelectronics
Breakdown voltage
Electrical and Electronic Engineering
Heterojunction Bipolar Transistors
business
Tin
Ohmic contact

Full Text Access

Tools