Back to Search
Start Over
Single and double heterojunction bipolar transistors in collector-up topology
- Source :
- Henkel, A. ; Delage, S. L. ; diForte-Poisson, M.-A. ; Floriot, D. ; Chartier, E. (1998) Single and double heterojunction bipolar transistors in collector-up topology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
- Publication Year :
- 1998
-
Abstract
- For the first time, DC- and RF characteristics of single and double heterojunction bipolar transistors (S-HBT and D-HBT respectively) in collector-up topology are measured and compared. Both devices are realized in InGaP/GaAs technology and offer high common emitter breakdown voltage (BVceo > 16V) and high maximum oscillation frequency (fmax > 115GHz)
- Subjects :
- ING-INF/01 Elettronica
Subjects
Details
- Language :
- Italian
- Database :
- OpenAIRE
- Journal :
- Henkel, A. ; Delage, S. L. ; diForte-Poisson, M.-A. ; Floriot, D. ; Chartier, E. (1998) Single and double heterojunction bipolar transistors in collector-up topology. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
- Accession number :
- edsair.doi.dedup.....80519499618ec5391cf1695cccba422b