Magnetic Skyrmion Transistor gated with Voltage-Controlled Magnetic Anisotropy

The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin-information transistor is expected to be an essential building block for the future development of spintronics. Here, we introduce a proof-of-concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally. With the spatially uniform control of magnetic anisotropy, we can maintain the shape and topology of a skyrmion when passing the controlled area. Our findings will open a new route towards the design and realization of skyrmion-based spintronic devices in the near future. This article is protected by copyright. All rights reserved.